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FPD1000AS
1W PACKAGED POWER PHEMT
FEATURES:
* * * * * * * * 31 dBm Output Power (P1dB) @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Suitable for applications to 5 GHz
Datasheet v3.0
PACKAGE
TYPICAL APPLICATIONS: GENERAL DESCRIPTION:
The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. * * Drivers or output stages in PCS/Cellular base station transmitter amplifiers Power applications in WLL/WLAN and WiMax amplifiers
ELECTRICAL SPECIFICATIONS:
PARAMETER
Power at 1dB Gain Compression P1dB
SYMBOL
CONDITIONS
VDS = 10V; IDS = 200 mA S and L tuned for Optimum IP3 VDS = 10V; IDS = 200 mA
MIN
30
TYP
31
MAX
UNITS
dBm
Power Gain at 1dB Gain Compression
G1dB
S and L tuned for Optimum IP3 VDS = 10 V; IDS = 200mA
13.5
15.0
Maximum Stable Gain MSG S21/S12 Power-Added Efficiency PAE at 1dB Gain Compression 3rd-Order Intermodulation Distortion S and L tuned for Optimum IP3 Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistance (channel-to-case) IM3
20 PIN = 0dBm, 50 system VDS = 10V; IDS = 200 mA S and L tuned for Optimum IP3 VDS = 10V; IDS = 200 mA -46 POUT = 19 dBm (single-tone level) 50
dB
%
dBc 480 650 1100 720 20 0.7 6 20 25 0.9 50 1.4 800 mA mA mS A V V V C/W
IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD|
VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS +1 V VDS = 1.3 V; VGS = 0 V VGS = -3 V VDS = 1.3 V; IDS = 2.4 mA IGS = 2.4 mA IGD = 2.4 mA See Note on following page
CC
Note: TAMBIENT = 22; RF specification measured at f = 1850 MHz using CW signal (except as noted)
1
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Tel: +44 (0) 1325 301111
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FPD1000AS
Datasheet v3.0
ABSOLUTE MAXIMUM RATING :
PARAMETER
Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current 2 RF Input Power Channel Operating Temperature Storage Temperature 3 Total Power Dissipation PTOT See De-Rating Note below 6W PIN TCH TSTG Under any acceptable bias state Under any acceptable bias state Non-Operating Storage 27.5dBm 175C -40C to 150C
1
SYMBOL
VDS VGS IDS IG
TEST CONDITIONS
7 -3V < VGS < -0.5V 0V < VDS < +8V For VDS > 2V Forward or reverse current
ABSOLUTE MAXIMUM
12V -3V IDSS +20/-20mA
Notes: 1 TAmbient = 22C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device; Users should avoid exceeding 80% of 2 or more Limits simultaneously 2 Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Total Power Dissipation defined as: PTOT (PDC + PIN) - POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power Total Power Dissipation to be de-rated as follows above 22C: PTOT= 6 - (0.04W/C) x TPACK where TPACK= source tab lead temperature above 22C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 55C carrier temperature: PTOT = 6W - (0.04 x (55 - 22)) = 4.68W 5 For optimum heatsinking, metal-filled through (Source) via holes should be used directly below the central metallized ground pad on the bottom of the package 6 Thermal Resistivity: The nominal value of 25C/W is measured with the package mounted on a large heatsink with thermal compound to ensure adequate (unsoldered) contact. The package temperature is referred to the Source leads. 7 Operating at absolute maximum VD continuously is not recommended. If operation is considered then IDS must be reduced in order to keep the part within it's thermal power dissipation limits. Therefore VGS is restricted to <-0.5V.
BIASING GUIDELINES:
* Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for additional information. Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices such as the FPD1000AS. The recommended 200mA bias point is nominally a Class AB mode. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point.
* *
RECOMMENDED OPERATING BIAS CONDITIONS:
* *
Drain-Source Voltage: Quiescent Current:
From 5V to 10V From 25% IDSS to 55% IDSS
2
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FPD1000AS
Datasheet v3.0
TYPICAL MEASURED RF PERFORMANCE:
Note: Measurement Conditions TAMBIENT = 22C unless otherwise stated (VDS=10V, IDS=200mA, f=1800MHz)
Power Transfer Characteristic
3.50 31.00 3.00 29.00 2.50
60.00% 60.00% 70.00% 70.00%
Drain Efficiency and PAE
Gain Compression (dB)
27.00
Output Power (dBm)
2.00 25.00 1.50
PAE (%)
PAE
40.00%
Eff.
40.00%
23.00
30.00%
30.00%
21.00
Pout
Comp Point
1.00
20.00%
20.00%
19.00
.50
10.00% 10.00%
17.00
.00
15.00 0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
-.50 18.00
.00% 0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
.00% 18.00
Input Power (dBm)
Input Power (dBm)
IMP ctsvs. Inp t P er rodu u ow
-15.00 27.00 -20.00
FPD1000AS I-V Curves
.800 .700
VGS = 0V
Output Power (dBm)
Drain-Source Current (A)
25.00
-25.00
P out
Im dB 3, c
-30.00
IM Products (dBc)
.600 .500
VGS = -0.25V
23.00 -35.00
VGS = -0.5V .400 .300 .200 .100 .000 0.00 VGS = -1.0V VGS = -1.25V 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 VGS = -0.75V
21.00
-40.00
-45.00 19.00 -50.00
17.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00
-55.00 12.00
In t P er(d m pu ow B )
Drain-Source Voltage (V)
FPD1000AS IP3 CONTOURS 1800 MHz
1.0
0.6
FPD1000AS POWER CONTOURS 1800 MHz
0.8 0.6 2.0 1.0
Swp Max 222
2.0
Swp Max 215
0.8
10.0
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0.2
0
-0.2 -5.0
.4 -0
.0 -2
-0.6
Swp Min 1
-0.8
-1.0
NOTE: IP3 contours generated with PIN = 11dB back-off from P1dB. Local maxima for best linearity located at: L = 40 + j55 and L = 113 + j70 with S = 15 + j12
3
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-10.0
-4.0
- 3.
0
0.2
48 dBm 46 dBm 44 dBm 42 dBm 40 dBm
3.0
0.4
4.0
5.0
28 dBm 29 dBm 30 dBm
3.0 4.0 5.0
0.2
10.0
31 dBm 32 dBm
0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 10.0 10. 0
0
-10.0 -0.2
-5.0 -4.0 -3.0 -0.4 0.6 2.0 0.8 1.0
Swp Min 1
NOTE: Power contours measured at constant input power level set to meet Optimum P1dB at the output match. Optimum match: S = 3 - j2 and L = 25 + j5
Website: www.filtronic.com
Drain Efficiency (%)
50.00%
50.00%
0. 4
FPD1000AS
Datasheet v3.0
TYPICAL MEASURED RF PERFORMANCE:
Note: Measurement Conditions TAMBIENT = 22C unless otherwise stated (VDS=10V, IDS=200mA)
FPD1000AS at VDS = 10V and IDS = 200mA
30.0
40
FPD1000AS WCDMA ACPR 1900 MHz DOWNLINK Pk/Avg = 9dB 0.01%
0
30
25.0
20
-10
Output Power (dBm)
20.0
10
-20
Ga in 15.0
-30 -10
(dB)
10.0
S21 MSG
-20
Output Power
ACPR (5 MHz)
-40
-30
ACPR (10MHz)
-50
-40
5.0
-50
-60
0.0 0 500 1000 1500 2000 2500 3000 3500 4000
-60 3 4 5 6 7 8 9 10 11 12 13 14
-70
Frequency (MHz)
Input Power (dBm)
AS PACKAGE OUTLINE AND RECOMMENDED PC BOARD LAYOUT:
(dimensions in millimeters - mm)
3.8 1.90.25 2.20.25 0.35 2 Plcs.
4.4
3.8
1.3 2 Plcs. 3.2 Epoxy Fillet 1.5 0.15
All Dimnesions in mm General Tolerance: .xx 0.05 .x 0.15 For best positional accuracy in auto pick and place device should be referenced directly from the leads
0.5 2 Plcs.
0 to 0.3 4 Plcs.
0.35 2 Plcs.
4
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ACPR (dBc)
0
FPD1000AS
Datasheet v3.0
REFERENCE DESIGN AT 1.70 TO 1.85 GHZ:
VGG -0.5V VDD = +10V
C6 C8 R2 C5 C7 L2 R1 C9 L1 C1 C2 Q1 C4
RF INPUT
RF OUTPUT
NOTE: AutoCADTM drawing available on request
DESIGNATOR
C1 C2 C4 C5 C6 C7 C8 C9 L1 L2 R1 R2 Q1
MANUFACTURER'S PART
ATC600S3R9CW250 ATC600S5R6CW250 ATC600S330JW250 ATC600S330JW250 T491B105M035AS7015 ATC600S680JW250 T491B105M035AS7015 ATC600S2R0BW250 0604HQ-1N1 0604HQ-1N1 RCI-0402-27R0J RCI-0603-12R0J FPD1000AS PC-SP-000010-006 TF-SP-000012 142-0711-841 AMP-103185-2 TF-SP-000003
DESCRIPTION
Capacitor, 3.9 pF, 0603, ATC 600, tol. +0.25pF Capacitor, 5.6 pF, 0603, ATC 600, tol. +0.25pF Capacitor, 33 pF, 0603, ATC 600, tol. +5% Capacitor, 33 pF, 0603, ATC 600, tol. +5% Capacitor, 1 mF, SMD-B, Kemet, tol. +20% Capacitor, 68 pF, 0603, ATC 600 Capacitor, 1 mF, SMD-B, Kemet, tol. +20% Capacitor, 2 pF, 0603, ATC 600, tol. +0.1pF Inductor, 1.1 nH, Coilcraft High Q Surface Mount Inductor, 1.1 nH, Coilcraft High Q Surface Mount Resistor, 27 W, 0402, IMS, tol. +5% Resistor, 12 W, 0603, IMS, tol. +5% 1w Packaged Power pHEMT, Filtronic PCB, Rogers R04003, 0.012"(0.3mm), 0.5oz.
QUANTITY
1 1 1 1 1 1 1 1 1 1 1 1 1 1 Carrier 1 Connector, RF, SMA End Launch, Jack Assy, 2 Connector, DC, 0.100 on center, 0.025 sq. 2 Center Block for P100 Package 1 Screw, #0-80 8 NOTE: 10-12 mil (0.3mm) plated thru vias used; vias under Q1 should be filled with Dupont CB100 conductive via plugging material in order to achieve optimal heatsinking.
5
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Tel: +44 (0) 1325 301111
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FPD1000AS
Datasheet v3.0
REFERENCE DESIGN AT 3.4 TO 3.5 GHZ:
PARAMETER
Frequency Gain P1dB IM3@19dBm Pout SCL S11 S22 Vd Vg Id
UNIT
GHz dB dBm dBc dB dB V V mA
PERFORMANCE
3.4 to 3.5 12 31 -46dBc -5 -19 10 -0.6 to -0.9 200
SCHEMATIC:
1.0uF
-Vg
100pF
Vd
1.0uF 10pF
FPD1000AS EVAL Board Schematic
10pF 20 Ohm Z10 Z9 Z15 Z14
1 3
Z16
15pF
1
Z1
2 4 3 1
Z5
2 4 3 1
Z8
2 4
15pF Z18 Z19
RF OUT (50 Ohm)
RF IN (50 Ohm)
Z2 Z1
Z3
Z4 Z5
Z6
Z7 Z8
Z11
Z12
2 4
3
Z13 Z17 Z14
Desc. Value 0.040" x 0.930" Microstrip Z1 W1=0.020" W2=0.040" W3=0.020" W4=0.040" Microstrip Cross Z2 0.020" x 0.140" Microstrip Z3 W1=0.020" W2=0.080" W3=0.020" W4=0.080" Microstrip Cross Z4 0.080" x 0.100" Microstrip Z5 0.020" x 0.350" Microstrip Z6 W1=0.020" W2=0.060" W3=0.020" W4=0.060" Microstrip Cross Z7 0.060" x 0.320" Microstrip Z8 0.015" x 0.256" Microstrip Z9 Z10, Z16 0.400" x 90 Microstrip Radial Stub Z11, Z12 0.040" x 0.040" Microstrip W1=0.040" W2=0.120" W3=0.040" W4=0.120" Microstrip Cross Z13 0.120" x 0.220" Microstrip Z14 0.015" x 0.330" Microstrip Z15 0.040" x 0.320" Microstrip Z17 0.150" x 0.140" Microstrip Z18 0.030" x 0.270" Microstrip Z19
6
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FPD1000AS
Datasheet v3.0
BOARD LAYOUT 3.4 TO 3.5 GHZ:
VD
RF IN
EV-SP-000017-002
NOTE: AutoCADTM drawing available on request
7
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
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FPD1000AS
Datasheet v3.0
S-PARAMETERS:
Note: Biased @ 10V, 200mA
FREQ-GHZ 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 4.10 4.20 4.30 4.40 4.50 4.60 4.70 4.80 4.90
S11MAG 0.88 0.87 0.87 0.87 0.86 0.86 0.86 0.86 0.86 0.86 0.86 0.86 0.86 0.86 0.86 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.84 0.84 0.84 0.83 0.83 0.83 0.82 0.82 0.82 0.82 0.82 0.82
S11ANG -128.80 -138.81 -146.73 -153.30 -158.82 -163.57 -167.75 -171.53 -174.94 -178.08 178.98 176.28 173.71 171.32 168.97 166.76 164.62 162.52 160.59 158.68 156.79 154.99 153.27 151.54 149.70 148.18 146.56 145.00 143.46 141.96 140.50 139.18 137.91 133.28 131.33 129.25 127.24 125.13 123.09 120.85 118.85 116.97 114.89 112.68 110.43
S21MAG 15.67 13.51 11.82 10.51 9.47 8.59 7.86 7.23 6.72 6.26 5.86 5.51 5.20 4.93 4.68 4.46 4.26 4.07 3.91 3.75 3.61 3.48 3.36 3.25 3.14 3.05 2.95 2.87 2.79 2.71 2.64 2.57 2.50 2.55 2.51 2.47 2.42 2.38 2.34 2.31 2.28 2.24 2.21 2.18 2.15
S21ANG 106.53 100.36 95.18 90.63 86.53 82.82 79.41 76.19 73.13 70.17 67.33 64.62 61.95 59.34 56.77 54.27 51.80 49.34 46.97 44.57 42.21 39.86 37.54 35.25 32.97 30.71 28.46 26.22 24.00 21.75 19.55 17.37 15.34 12.52 10.15 7.62 5.19 2.91 0.60 -1.66 -4.25 -6.61 -8.92 -11.33 -13.72
S12MAG 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06
S12ANG 28.11 24.30 21.50 19.18 17.49 15.99 14.99 13.89 13.12 12.20 11.65 11.00 10.43 10.09 9.33 9.11 8.72 8.23 7.91 7.48 6.98 6.55 6.11 5.76 5.67 5.28 4.73 4.39 3.80 3.47 2.94 2.37 2.17 1.14 0.41 -0.73 -1.59 -2.45 -3.33 -4.30 -5.16 -6.12 -7.13 -7.96 -8.99
S22MAG 0.28 0.28 0.28 0.28 0.28 0.28 0.28 0.28 0.28 0.28 0.29 0.29 0.29 0.29 0.29 0.29 0.29 0.30 0.30 0.30 0.30 0.30 0.30 0.31 0.31 0.31 0.31 0.31 0.31 0.31 0.32 0.32 0.32 0.30 0.30 0.30 0.30 0.30 0.30 0.29 0.29 0.29 0.29 0.29 0.29
S22ANG -125.75 -134.41 -140.94 -146.22 -150.43 -154.02 -156.96 -159.56 -161.88 -163.82 -165.60 -167.20 -168.79 -170.11 -171.44 -172.55 -173.63 -174.74 -175.59 -176.51 -177.41 -178.34 -179.07 -179.86 179.17 178.58 177.94 177.26 176.65 176.12 175.68 175.37 174.54 171.63 170.81 169.88 168.68 167.57 166.08 164.67 163.90 162.91 161.64 160.21 158.83
8
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FPD1000AS
Datasheet v3.0
S-PARAMETERS (CONT.):
Biased 10V, 200mA
FREQ-GHZ 5.00 5.10 5.20 5.30 5.40 5.50 5.60 5.70 5.80 5.90 6.00 6.10 6.20 6.30 6.40 6.50 6.60 6.70 6.80 6.90 7.00 7.10 7.20 7.30 7.40 7.50 7.60 7.70 7.80 7.90 8.00 8.10 8.20 8.30 8.40 8.50 8.60 8.70 8.80 8.90 9.00 9.10 9.20 9.30 9.40 9.50 9.60 9.70 9.80 9.90 10.00 S11MAG 0.82 0.81 0.81 0.81 0.81 0.81 0.80 0.80 0.80 0.80 0.80 0.80 0.80 0.80 0.80 0.80 0.79 0.79 0.78 0.79 0.79 0.79 0.79 0.79 0.79 0.80 0.80 0.80 0.80 0.80 0.80 0.80 0.80 0.81 0.81 0.81 0.81 0.81 0.81 0.81 0.81 0.81 0.82 0.82 0.82 0.82 0.82 0.82 0.83 0.82 0.82 S11ANG 108.18 105.83 103.46 101.13 98.72 96.33 93.92 91.39 88.80 86.30 83.78 81.27 78.66 76.05 73.44 70.67 67.95 65.31 63.23 61.09 58.43 55.67 52.99 50.30 47.73 45.33 42.75 40.08 37.57 34.99 32.44 30.01 27.63 25.29 22.80 20.44 18.12 15.80 13.42 11.15 8.87 6.58 4.40 2.09 -0.07 -2.41 -4.64 -7.03 -9.45 -11.95 -14.29 S21MAG 2.13 2.10 2.08 2.05 2.03 2.00 1.98 1.96 1.93 1.91 1.89 1.87 1.85 1.82 1.80 1.78 1.75 1.72 1.71 1.71 1.70 1.68 1.66 1.64 1.62 1.61 1.59 1.57 1.55 1.53 1.52 1.50 1.48 1.47 1.45 1.43 1.42 1.40 1.39 1.37 1.36 1.35 1.34 1.33 1.32 1.30 1.29 1.28 1.27 1.26 1.25 S21ANG -16.13 -18.60 -21.11 -23.59 -26.08 -28.59 -31.11 -33.62 -36.18 -38.70 -41.23 -43.77 -46.41 -49.03 -51.60 -54.20 -56.75 -59.02 -60.71 -63.43 -66.42 -69.26 -71.95 -74.59 -77.04 -79.49 -82.36 -85.07 -87.69 -90.32 -92.91 -95.45 -97.99 -100.59 -103.20 -105.74 -108.27 -110.78 -113.31 -115.81 -118.27 -120.72 -123.22 -125.78 -128.34 -130.90 -133.47 -136.06 -138.66 -141.19 -143.71 S12MAG 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.10 0.10 0.10 0.10 0.10 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.14 0.14 0.14 S12ANG -9.98 -11.10 -12.35 -13.63 -14.83 -16.07 -17.49 -18.72 -20.03 -21.39 -22.73 -24.19 -26.10 -27.81 -29.44 -30.98 -32.63 -33.63 -32.15 -33.13 -35.89 -38.30 -40.44 -42.24 -43.66 -44.69 -46.91 -49.10 -51.11 -53.07 -55.02 -56.92 -58.66 -60.57 -62.43 -64.13 -65.92 -67.73 -69.56 -71.48 -73.28 -75.07 -76.87 -78.81 -80.75 -82.67 -84.62 -86.70 -88.65 -90.55 -92.29 S22MAG 0.29 0.29 0.29 0.29 0.29 0.29 0.29 0.29 0.29 0.29 0.29 0.29 0.29 0.29 0.29 0.29 0.29 0.28 0.28 0.29 0.30 0.30 0.30 0.30 0.30 0.30 0.31 0.31 0.31 0.32 0.32 0.32 0.32 0.32 0.32 0.33 0.33 0.33 0.33 0.33 0.33 0.33 0.33 0.33 0.34 0.34 0.34 0.34 0.34 0.34 0.34 S22ANG 157.42 155.91 154.46 152.90 151.36 149.74 148.11 146.28 144.50 142.74 141.04 139.39 137.34 135.24 133.07 130.98 128.65 126.73 126.99 126.51 124.01 121.40 118.89 116.47 114.40 113.31 110.92 108.33 105.97 103.61 101.30 99.02 96.94 94.64 92.31 89.97 87.60 85.33 83.03 80.64 78.35 76.22 74.12 71.85 69.43 67.07 64.55 62.06 59.65 57.31 54.97
9
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FPD1000AS
Datasheet v3.0
TAPE AND REEL DIMENSIONS AND PART ORIENTATION
f xxx xxx
PACKAGE MARKING CODE
Example: f1ZD P2F
f = Filtronic 1ZD = Lot / Date Code
P2F = Status, Part Code, Part Type Parts per reel 178mm = 1000 330mm = 2500
10
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
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FPD1000AS
Datasheet v3.0
PREFERRED ASSEMBLY INSTRUCTIONS:
This package is compatible with both lead free and leaded solder reflow processes as defined within IPC/JEDEC J-STD-020C. The maximum package temperature should not exceed 260C. Package leads are gold plated.
ORDERING INFORMATION:
PART NUMBER
FPD1000AS FPD1000AS-EB
DESCRIPTION
Packaged pHEMT Packaged pHEMT evaluation board EB-1000AS-AB (880MHz) EB-1000AS-AA (1.85GHz)
HANDLING PRECAUTIONS:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing.
EB-1000AS-AD (2.14GHz) EB-1000AS-AG (2.5 to 2.7GHz) EB-1000AS-AH (3.5GHz)
ESD/MSL RATING:
These devices should be treated as Class 1A (250-500 V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD1686 and MIL-HDBK-263. The device has a MSL rating of Level 1. To determine this rating, preconditioning was performed to the device per, the Pb-free solder profile defined within IPC/JEDEC J-STD-020C, Moisture / Reflow sensitivity classification for non-hermatic solid state surface mount devices
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters, noise parameters and device model are available on request.
DISCLAIMERS:
This product is not designed for use in any space based or life sustaining/supporting equipment.
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Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com

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